Cadmium Telluride (CdTe)
Direct-bandgap II-VI semiconductor that dominates thin-film photovoltaics.
Core Principles & Analysis
Its direct bandgap of about 1.5 eV sits near the optimum for the solar spectrum, so a film only a few micrometres thick absorbs most usable sunlight.
CdTe is the second most deployed solar cell technology after silicon, with record research cell efficiencies above 22%.
Alloyed with zinc as CdZnTe, it forms room-temperature X-ray and gamma-ray detectors used in medical imaging and security scanners.
Specifications & Metrics
DENSITY:
5.85 g/cm³
YIELD STRENGTH:
N/A (brittle)
HARDNESS:
50 HK
Related
Gallium Arsenide (GaAs)
Cadmium Selenide Quantum Dots
Monocrystalline Silicon (Czochralski)
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